TC 9-62
over part of its range of operation. The heavy doping causes the tunnel diode
to have a very narrow depletion region and also causes the valence band of one
of the semiconductor materials to overlap the energy level of the conduction
band of the other semiconductor material. At the energy overlap point,
electrons can cross from the valence band of one material to the conduction
band of the other material without acquiring any additional energy. This action
speed switching devices.
VARACTOR - a
diode that exhibits the
characteristics of a
variable capacitor.
The
depletion region at the PN junction acts as the dielectric of a capacitor and is
caused to expand and contract by the voltage applied to the diode. This action
3-38
TC 9-62
23 June 2005